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Title: Rutile-structured TiO{sub 2} deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode

In this work, tetrakis(dimethylamino)titanium precursor as well as in-situ oxidized ruthenium bottom electrode were used to grow rutile-structured titanium dioxide thin layers by plasma enhanced atomic layer deposition. Metal–insulator–metal capacitors have been elaborated in order to study the electrical properties of the device. It is shown that this process leads to devices exhibiting excellent results in terms of dielectric constant and leakage current.
Authors:
; ; ; ;  [1]
  1. Microelectronics Technology Laboratory (LTM), Joseph Fourier University (UJF) and French National Center for Scientific Research - CNRS, CEA – LETI MINATEC, 17 Avenue des Martyrs, 38054 Grenoble Cedex 9 (France)
Publication Date:
OSTI Identifier:
22258671
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITORS; DEPOSITION; DEPOSITS; ELECTRODES; LEAKAGE CURRENT; PERMITTIVITY; PLASMA; RUTHENIUM; RUTILE; THIN FILMS; TITANIUM; TITANIUM OXIDES