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Title: Conduction processes in metal–insulator–metal diodes with Ta{sub 2}O{sub 5} and Nb{sub 2}O{sub 5} insulators deposited by atomic layer deposition

Metal–insulator–metal diodes with Nb{sub 2}O{sub 5} and Ta{sub 2}O{sub 5} insulators deposited via atomic layer deposition are investigated. For both Nb{sub 2}O{sub 5} and Ta{sub 2}O{sub 5}, the dominant conduction process is established as Schottky emission at small biases and Frenkel–Poole emission at large biases. Fowler–Nordheim tunneling is not found to play a role in determining current versus voltage asymmetry. The dynamic dielectric constants are extracted from conduction plots and found to be in agreement with measured optical dielectric constants. Trap energy levels at ϕ{sub T} ≈ 0.62 and 0.53 eV below the conduction band minimum are estimated for Nb{sub 2}O{sub 5} and Ta{sub 2}O{sub 5}, respectively.
Authors:
; ; ;  [1]
  1. School of Electrical Engineering and Computer Science, Oregon State University, 1148 Kelley Engineering Center, Corvallis, Oregon 97331-5501 (United States)
Publication Date:
OSTI Identifier:
22258668
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ASYMMETRY; DEPOSITION; DEPOSITS; ELECTRIC POTENTIAL; EMISSION; ENERGY LEVELS; FOWLER-NORDHEIM THEORY; NIOBATES; NIOBIUM OXIDES; PERMITTIVITY; TANTALUM OXIDES; TUNNEL EFFECT