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Title: Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition

Amorphous HfLaO dielectric film was successfully deposited on a silicon-on-insulator (SOI) substrate by plasma enhanced atomic layer deposition with in situ plasma treatment. The HfLaO film retained its insulating characteristics and is thermally stable even after annealing at 800 °C. The film has a dielectric constant of 27.3 and leakage of only 0.03 mA/cm{sup 2} at a gate bias of |Vg − V{sub fb}| = 1 V. The capacitance equivalent oxide thickness is 0.7 nm. A new parallel electrode testing structure was applied to measure C–V and J–V characteristics for the SOI samples. This testing method for metal–oxide–semiconductor capacitors has potential uses for measuring other layered substrates.
Authors:
; ; ; ; ; ; ; ;  [1] ;  [2]
  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China)
  2. Department of Electrical and Computer Engineering, University of Alabama in Huntsville, Huntsville, Alabama 35899 (United States)
Publication Date:
OSTI Identifier:
22258660
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ANNEALING; CAPACITANCE; CAPACITORS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRODES; FILMS; PERMITTIVITY; PLASMA; SILICON; SILICON OXIDES; SUBSTRATES; TEMPERATURE RANGE 0400-1000 K; TESTING; THICKNESS