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Title: Oxygen plasma immersion ion implantation treatment to enhance data retention of tungsten nanocrystal nonvolatile memory

Data retention characteristics of tungsten nanocrystal (W-NC) memory devices using an oxygen plasma immersion ion implantation (PIII) treatment are investigated. With an increase of oxygen PIII bias voltage and treatment time, the capacitance–voltage hysteresis memory window is increased but the data retention characteristics become degraded. High-resolution transmission electron microscopy images show that this poor data retention is a result of plasma damage on the tunneling oxide layer, which can be prevented by lowering the bias voltage to 7 kV. In addition, by using the elevated temperature retention measurement technique, the effective charge trapping level of the WO{sub 3} film surrounding the W-NCs can be extracted. This measurement reveals that a higher oxygen PIII bias voltage and treatment time induces more shallow traps within the WO{sub 3} film, degrading the retention behavior of the W-NC memory.
Authors:
; ;  [1] ;  [2] ; ;  [3]
  1. Department of Electronic Engineering, Chang Gung University, Kweishan 333, Taoyuan, Taiwan (China)
  2. Department of Material Engineering and Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taishan 24301, New Taipei City, Taiwan (China)
  3. Institute of Nuclear Energy Research, Atomic Energy Council, Longtan 325, Taoyuan, Taiwan (China)
Publication Date:
OSTI Identifier:
22258657
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 2; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DAMAGE; EFFECTIVE CHARGE; ELECTRIC POTENTIAL; FILMS; HYSTERESIS; IMAGES; ION IMPLANTATION; LAYERS; MEMORY DEVICES; NANOSTRUCTURES; OXYGEN; PLASMA; RESOLUTION; RETENTION; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTATES; TUNGSTEN; TUNGSTEN OXIDES; TUNNEL EFFECT