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Title: Chemical bonding and defect states of LPCVD grown silicon-rich Si{sub 3}N{sub 4} for quantum dot applications

Si-rich Si{sub 3}N{sub 4} (SRN) thin films were investigated to understand the various defect states present within the SRN that can lead to reduced performance in quantum dot based devices made of these materials. The SRN films, deposited by low pressure chemical vapor deposition followed by furnace anneals over a range of temperatures, were determined to be comprised of two distinct phase separated SRN regions with different compositions (precipitates within a host matrix). Photoluminescence (PL) spectra showed multiple peaks convoluted together within the visible and near-visible range. Depending on deposition and annealing conditions, the films displayed changes in PL peak intensities which were correlated with chemical bonding utilizing x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and capacitance–voltage measurements. It is found that the PL originates from defect-state to defect-state and band edge to defect-state electronic transitions.
Authors:
;  [1] ; ;  [2]
  1. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080 (United States)
  2. Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080 (United States)
Publication Date:
OSTI Identifier:
22258654
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 2; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DEFECTS; ELLIPSOMETRY; FOURIER TRANSFORM SPECTROMETERS; PHOTOLUMINESCENCE; PRECIPITATION; QUANTUM DOTS; SILICON; SILICON NITRIDES; SPECTRA; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY