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Title: Process monitoring during AlN{sub x}O{sub y} deposition by reactive magnetron sputtering and correlation with the film's properties

Abstract

In this work, AlN{sub x}O{sub y} thin films were deposited by reactive magnetron sputtering, using an aluminum target and an Ar/(N{sub 2}+O{sub 2}) atmosphere. The direct current magnetron discharge parameters during the deposition process were investigated by optical emission spectroscopy and a plasma floating probe was used. The discharge voltage, the electron temperature, the ion flux, and the optical emission lines were recorded for different reactive gas flows, near the target and close to the substrate. This information was correlated with the structural features of the deposits as a first step in the development of a system to control the structure and properties of the films during reactive magnetron sputtering. As the target becomes poisoned, the discharge voltage suffers an important variation, due to the modification of the secondary electron emission coefficient of the target, which is also supported by the evolution of the electron temperature and ion flux to the target. The sputtering yield of the target was also affected, leading to a reduction of the amount of Al atoms arriving to the substrate, according to optical emission spectroscopy results for Al emission line intensity. This behavior, together with the increase of nonmetallic elements in the films, allowed obtainingmore » different microstructures, over a wide range of compositions, which induced different electrical and optical responses of films.« less

Authors:
; ;  [1];  [2]
  1. Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal)
  2. Institut FEMTO-ST, Département MN2S, UMR 6174 CNRS, Université de Franche-Comté, ENSMM, UTBM, 32, Avenue de l'Observatoire, 25044 Besançon Cedex (France)
Publication Date:
OSTI Identifier:
22258645
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 32; Journal Issue: 2; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; ALUMINIUM NITRIDES; ARGON; ATMOSPHERES; DEPOSITION; DIRECT CURRENT; ELECTRIC POTENTIAL; ELECTRON EMISSION; ELECTRON TEMPERATURE; EMISSION SPECTROSCOPY; GAS FLOW; MAGNETRONS; MICROSTRUCTURE; PLASMA; SPUTTERING; SUBSTRATES; THIN FILMS

Citation Formats

Borges, Joel, Vaz, Filipe, Marques, Luis, and Martin, Nicolas. Process monitoring during AlN{sub x}O{sub y} deposition by reactive magnetron sputtering and correlation with the film's properties. United States: N. p., 2014. Web. doi:10.1116/1.4863957.
Borges, Joel, Vaz, Filipe, Marques, Luis, & Martin, Nicolas. Process monitoring during AlN{sub x}O{sub y} deposition by reactive magnetron sputtering and correlation with the film's properties. United States. https://doi.org/10.1116/1.4863957
Borges, Joel, Vaz, Filipe, Marques, Luis, and Martin, Nicolas. 2014. "Process monitoring during AlN{sub x}O{sub y} deposition by reactive magnetron sputtering and correlation with the film's properties". United States. https://doi.org/10.1116/1.4863957.
@article{osti_22258645,
title = {Process monitoring during AlN{sub x}O{sub y} deposition by reactive magnetron sputtering and correlation with the film's properties},
author = {Borges, Joel and Vaz, Filipe and Marques, Luis and Martin, Nicolas},
abstractNote = {In this work, AlN{sub x}O{sub y} thin films were deposited by reactive magnetron sputtering, using an aluminum target and an Ar/(N{sub 2}+O{sub 2}) atmosphere. The direct current magnetron discharge parameters during the deposition process were investigated by optical emission spectroscopy and a plasma floating probe was used. The discharge voltage, the electron temperature, the ion flux, and the optical emission lines were recorded for different reactive gas flows, near the target and close to the substrate. This information was correlated with the structural features of the deposits as a first step in the development of a system to control the structure and properties of the films during reactive magnetron sputtering. As the target becomes poisoned, the discharge voltage suffers an important variation, due to the modification of the secondary electron emission coefficient of the target, which is also supported by the evolution of the electron temperature and ion flux to the target. The sputtering yield of the target was also affected, leading to a reduction of the amount of Al atoms arriving to the substrate, according to optical emission spectroscopy results for Al emission line intensity. This behavior, together with the increase of nonmetallic elements in the films, allowed obtaining different microstructures, over a wide range of compositions, which induced different electrical and optical responses of films.},
doi = {10.1116/1.4863957},
url = {https://www.osti.gov/biblio/22258645}, journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 2,
volume = 32,
place = {United States},
year = {Sat Mar 15 00:00:00 EDT 2014},
month = {Sat Mar 15 00:00:00 EDT 2014}
}