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Title: Effect of annealing treatment on the electrical characteristics of Pt/Cr-embedded ZnO/Pt resistance random access memory devices

ZnO/Cr/ZnO trilayer films sandwiched with Pt electrodes were prepared for nonvolatile resistive memory applications. The threshold voltage of a ZnO device embedded with a 3-nm Cr interlayer was approximately 50% lower than that of a ZnO monolayer device. This study investigated threshold voltage as a function of Cr thickness. Both the ZnO monolayer device and the Cr-embedded ZnO device structures exhibited resistance switching under electrical bias both before and after rapid thermal annealing (RTA) treatment, but resistive switching effects in the two cases exhibited distinct characteristics. Compared with the as-fabricated device, the memory cell after RTA demonstrated remarkable device parameter improvements, including a lower threshold voltage, a lower write current, and a higher R{sub off}/R{sub on} ratio. Both transmission electron microscope observations and Auger electron spectroscopy revealed that the Cr charge trapping layer in Cr-embedded ZnO dispersed uniformly into the storage medium after RTA, and x-ray diffraction and x-ray photoelectron spectroscopy analyses demonstrated that the Cr atoms lost electrons to become Cr{sup 3+} ions after dispersion. These results indicated that the altered status of Cr in ZnO/Cr/ZnO trilayer films during RTA treatment was responsible for the switching mechanism transition.
Authors:
 [1] ;  [2] ;  [3]
  1. Department of Materials Engineering, Ming Chi University of Technology, No. 84, Gongzhuan Rd., Taishan Dist., New Taipei City 24301, Taiwan and Center for Thin Film Technologies and Applications, Ming Chi University of Technology, No. 84, Gongzhuan Rd., Taishan Dist., New Taipei City 24301, Taiwan (China)
  2. Department of Electronic Engineering, Chang Gung University, No. 259, Wen-Hwa 1st Rd., Kwei-Shan Tao-Yuan 33302, Taiwan (China)
  3. Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan (China)
Publication Date:
OSTI Identifier:
22258641
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 2; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; APPROXIMATIONS; AUGER ELECTRON SPECTROSCOPY; CHROMIUM; CHROMIUM IONS; COMPARATIVE EVALUATIONS; ELECTRIC POTENTIAL; ELECTRONS; EQUIPMENT; FILMS; LAYERS; MEMORY DEVICES; PLATINUM; RANDOMNESS; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES