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Title: Degradation of transparent conductive properties of undoped ZnO and Ga-doped ZnO films left in atmospheric ambient for several years and trials to recover initial conductance

Journal Article · · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
DOI:https://doi.org/10.1116/1.4866233· OSTI ID:22258640
 [1]
  1. NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)

This study evaluated the long-term stability of the transparent conductive properties of undoped ZnO and Ga-doped ZnO (GZO) films that had been left in an atmospheric ambient environment for 5 to 6 yr. When ZnO films are stored in a clean room with a controlled temperature and humidity of 23 °C and 45%, respectively, throughout the year, the increases in sheet resistance are less than 5% of their initial value. The ZnO films stored in a non-air-conditioned laboratory room, whose temperature varies between 5 and 35 °C and humidity varies between 30% and 70% per year, suffer from increases in the sheet resistance by almost 13%, which is associated with a slight rise in the near-infrared transmittance level. Postannealing of these degraded ZnO films at 150–200 °C recovers the initial conductance by removing the H{sub 2}O molecules that have penetrated the film. One hour of irradiation with electron cyclotron resonance Ar plasma effectively restores the conductive surfaces while maintaining a temperature below 70 °C. The GZO films containing a few weight percent of Ga{sub 2}O{sub 3} are stable even when stored in a non-air-conditioned laboratory room, with changes in the sheet resistance of less than 3%. The GZO films with a Ga{sub 2}O{sub 3} content larger than 10 wt. %, however, exhibit serious degradation probably due to the strong affinity of segregated Ga{sub 2}O{sub 3} domains with H{sub 2}O vapor molecules. Neither postannealing nor Ar plasma irradiation can recover the initial sheet resistance of these GZO films.

OSTI ID:
22258640
Journal Information:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 32, Issue 2; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
Country of Publication:
United States
Language:
English

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