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Title: Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1−x}N/GaN heterojunctions using variational method

A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.
Authors:
; ;  [1]
  1. Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)
Publication Date:
OSTI Identifier:
22258639
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 2; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; APPROXIMATIONS; ELECTRIC POTENTIAL; ELECTRON GAS; ENERGY LEVELS; GALLIUM NITRIDES; HETEROJUNCTIONS; QUANTUM WELLS; THICKNESS; TWO-DIMENSIONAL CALCULATIONS; VARIATIONAL METHODS