Effect of stacking sequence on crystallization in Al/a-Ge bilayer thin films
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi 710049 (China)
- College of Physics and Information Technology, Shaanxi Normal University, Xi'an, Shaanxi 710062 (China)
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi'an University of Arts and Science, Xi'an, Shaanxi 710065 (China)
Two types of bilayer thin films with different deposition sequences, i.e., amorphous Ge under Al (a-Ge/Al) and the inverse (Al/a-Ge), were prepared by magnetron sputtering at room temperature. In-situ and ex-situ thermal annealing were compared to study the effect of the stacking sequence on crystallization of amorphous Ge. Although metal-induced crystallization occurred in both cases at low temperature, layer exchange was observed only in a-Ge/Al. In fact, compressive stress could usually be produced when Ge atoms diffused into Al grain boundaries and crystallized there. In the a-Ge/Al system, the stress could be released through diffusion of Al atoms onto the surface and formation of hillocks. Thus, grain boundary (GB) mediated crystallization was dominant in the whole process and layer exchange occurred. However, in the Al/a-Ge system, it was difficult for stress to be relaxed because the Ge sublayer and substrate restricted the diffusion of Al atoms. GB-mediated crystallization was, therefore, considerably suppressed and interface-mediated crystallization was preferred without layer exchange. This leads to distinct morphologies of dendrites in the two systems.
- OSTI ID:
- 22258632
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 32, Issue 3; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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