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Title: Picosecond spin relaxation in low-temperature-grown GaAs

The spin relaxation process of low-temperature-grown GaAs is investigated by spin-dependent pump and probe reflectance measurements with a sub-picosecond time resolution. Two very short carrier lifetimes of 2.0 ps and 28 ps, which can be attributed to nonradiative recombinations related to defects, are observed at 10 K. The observed spin polarization shows double exponential decay with spin relaxation times of 46.2 ps (8.0 ps) and 509 ps (60 ps) at 10 K (200 K). The observed picosecond spin relaxation, which is considerably shorter than that of conventional GaAs, indicates the strong relevance of the Elliott-Yafet process as the spin relaxation mechanism. For the first (second) spin relaxation component, the temperature and carrier density dependences of the spin relaxation time indicate that the Bir-Aronov-Pikus process is also effective at temperatures between 10 K and 77 K, and that the D'yakonov-Perel’ process is effective between 125 K (77 K) and 200 K.
Authors:
; ; ;  [1] ; ;  [2]
  1. Department of Applied Physics, Waseda University, Tokyo 169-8555 (Japan)
  2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou (China)
Publication Date:
OSTI Identifier:
22258624
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER LIFETIME; CRYSTAL GROWTH; GALLIUM ARSENIDES; RELAXATION TIME; SPIN; SPIN ORIENTATION