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Title: Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers

We report on a characterization of fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Multi-wavelength pump-probe measurements were used to determine gain recovery rates, following a powerful optical pump pulse, at various wavelengths for different bias levels and pump excitation powers. The recovery was dominated by coupling between the electronic states in the quantum-dots and the high energy carrier reservoir via capture and escape mechanisms. These processes determine also the wavelength dependencies of gain saturation depth and the asymptotic gain recovery level. Unlike quantum-dash amplifiers, these quantum-dots exhibit no instantaneous gain response, confirming their quasi zero-dimensional nature.
Authors:
; ;  [1] ;  [1] ;  [2] ;  [1] ;  [3] ; ;  [4] ; ;  [5]
  1. Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel)
  2. (Poland)
  3. (United States)
  4. Institute of Physics, Wroclaw University of Technology, Wroclaw 50-370 (Poland)
  5. Technische Physik, Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel, Kassel D-34132 (Germany)
Publication Date:
OSTI Identifier:
22258618
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMPLIFIERS; GAIN; INDIUM ARSENIDES; INDIUM PHOSPHIDES; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; WAVELENGTHS