Effects of Ta incorporation in La{sub 2}O{sub 3} gate dielectric of InGaZnO thin-film transistor
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon (Hong Kong)
The effects of Ta incorporation in La{sub 2}O{sub 3} gate dielectric of amorphous InGaZnO thin-film transistor are investigated. Since the Ta incorporation is found to effectively enhance the moisture resistance of the La{sub 2}O{sub 3} film and thus suppress the formation of La(OH){sub 3}, both the dielectric roughness and trap density at/near the InGaZnO/dielectric interface can be reduced, resulting in a significant improvement in the electrical characteristics of transistor. Among the samples with different Ta contents, the one with a Ta/(Ta + La) atomic ratio of 21.7% exhibits the best performance, including high saturation carrier mobility of 23.4 cm{sup 2}/V·s, small subthreshold swing of 0.177 V/dec, and negligible hysteresis. Nevertheless, excessive incorporation of Ta can degrade the device characteristics due to newly generated Ta-related traps.
- OSTI ID:
- 22258602
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors
Double-gate SnO{sub 2} nanowire electric-double-layer transistors with tunable threshold voltage