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Title: Resonant intersubband plasmon induced current in InGaAs quantum wells on GaAs

We present measurements of the current enhancement due to the coupling of two intersubband plasmons in In{sub 0.05}Ga{sub 0.95}As quantum wells. With changing bias, an emissive and an absorptive intersubband plasmon mode cross attractively and trapped electrons in the ground state gain enough energy from the plasma wave to be lifted up to the second subband, where they can contribute to the current. This effect can be directly observed as an increase of 33% in the current. A magnetic field applied parallel to the growth direction allows a control of the strength of the intersubband plasmon coupling up to a quenching.
Authors:
; ; ; ; ;  [1] ;  [2]
  1. Institute for Solid State Electronics and Center for Micro- and Nanostructures, Vienna University of Technology, Vienna (Austria)
  2. Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467 (United States)
Publication Date:
OSTI Identifier:
22258597
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENTS; GALLIUM ARSENIDES; GROUND STATES; INDIUM ARSENIDES; QUANTUM WELLS; TRAPPED ELECTRONS