Resonant intersubband plasmon induced current in InGaAs quantum wells on GaAs

Journal Article · Mon Mar 24 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4869757· OSTI ID:22258597

Holzbauer, Martin; Klang, Pavel; Detz, Hermann; Maxwell Andrews, Aaron; Strasser, Gottfried; Gornik, Erich ^[1]; Bakshi, Pradip ^[2]

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1. Institute for Solid State Electronics and Center for Micro- and Nanostructures, Vienna University of Technology, Vienna (Austria)
2. Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467 (United States)

We present measurements of the current enhancement due to the coupling of two intersubband plasmons in In{sub 0.05}Ga{sub 0.95}As quantum wells. With changing bias, an emissive and an absorptive intersubband plasmon mode cross attractively and trapped electrons in the ground state gain enough energy from the plasma wave to be lifted up to the second subband, where they can contribute to the current. This effect can be directly observed as an increase of 33% in the current. A magnetic field applied parallel to the growth direction allows a control of the strength of the intersubband plasmon coupling up to a quenching.

• OSTI ID: 22258597
• Journal Information: Applied Physics Letters, Vol. 104, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENTS
GALLIUM ARSENIDES
GROUND STATES
INDIUM ARSENIDES
QUANTUM WELLS
TRAPPED ELECTRONS