skip to main content

Title: Atomic configuration of irradiation-induced planar defects in 3C-SiC

The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions.
Authors:
 [1] ;  [2] ;  [3] ; ; ;  [4] ;  [1] ;  [1] ;  [2]
  1. Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China)
  2. (China)
  3. Institute of Nuclear Engineering and Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China)
  4. Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China)
Publication Date:
OSTI Identifier:
22258596
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON; IRRADIATION; MONOCRYSTALS; SILICON CARBIDES; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY