skip to main content

Title: Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions

Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene–hexagonal boron nitride–graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene–hexagonal boron nitride–graphene devices. Density-of-states features are observed in the tunneling characteristics of the devices, although without large resonant peaks that would arise from lateral momentum conservation. The lack of distinct resonant behavior is attributed to disorder in the devices, and a possible source of the disorder is discussed.
Authors:
; ; ;  [1] ; ;  [2] ; ;  [3] ;  [1] ;  [4]
  1. School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332 (United States)
  2. Department of Electrical Engineering and Computer Science, University of Tennessee, 1520 Middle Drive, Knoxville, Tennessee 37996 (United States)
  3. Department of Physics, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pennsylvania 15213 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22258592
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON NITRIDES; CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; GRAPHENE; SEMICONDUCTOR JUNCTIONS; TUNNEL EFFECT