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Title: Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes

We observed visible-light electroluminescence (EL) due to d-d transitions in light-emitting diodes with Mn-doped GaAs layers (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show two peaks at 1.89 eV and 2.16 eV, which are exactly the same as {sup 4}A{sub 2}({sup 4}F) → {sup 4}T{sub 1}({sup 4}G) and {sup 4}T{sub 1}({sup 4}G) → {sup 6}A{sub 1}({sup 6}S) transitions of Mn atoms doped in ZnS. The temperature dependence and the current-density dependence are consistent with the characteristics of d-d transitions. We explain the observed EL spectra by the p-d hybridized orbitals of the Mn d electrons in GaAs.
Authors:
; ;  [1]
  1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
Publication Date:
OSTI Identifier:
22258587
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DOPED MATERIALS; ELECTROLUMINESCENCE; GALLIUM ARSENIDES; LIGHT EMITTING DIODES; TEMPERATURE DEPENDENCE; ZINC SULFIDES