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Title: Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS{sub 2} films

Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS{sub 2}. In this work, electrostatic doping by buried gates is used to study the electronic and optoelectronic properties of p-n junctions in exfoliated MoS{sub 2} flakes. Creating a controllable doping gradient across the device leads to the observation of the photovoltaic effect in monolayer and bilayer MoS{sub 2} flakes. For thicker flakes, strong ambipolar conduction enables realization of fully reconfigurable p-n junction diodes with rectifying current-voltage characteristics, and diode ideality factors as low as 1.6. The spectral response of the photovoltaic effect shows signatures of the predicted band gap transitions. For the first excitonic transition, a shift of >4{sub kB}T is observed between monolayer and bulk devices, indicating a thickness-dependence of the excitonic coulomb interaction.
Authors:
; ; ;  [1] ; ;  [2]
  1. The College of Nanoscale Science and Engineering (CNSE), SUNY at Albany, Albany, New York 12203 (United States)
  2. National Institute of Materials Science, 1-2-1 Sengen, Tsukuba-city, Ibaraki 305-0047 (Japan)
Publication Date:
OSTI Identifier:
22258586
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; MOLYBDENUM SULFIDES; PHOTOVOLTAIC EFFECT; P-N JUNCTIONS; SEMICONDUCTOR DEVICES; THIN FILMS