CdS/PbSe heterojunction for high temperature mid-infrared photovoltaic detector applications

Journal Article · Mon Mar 24 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4869752· OSTI ID:22258581

Weng, Binbin; Qiu, Jijun; Zhao, Lihua; Chang, Caleb ^[1]; Shi, Zhisheng ^[1]

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1. The School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019 (United States)

n-CdS/p-PbSe heterojunction is investigated. A thin CdS film is deposited by chemical bath deposition on top of epitaxial PbSe film by molecular beam epitaxy on Silicon. Current-voltage measurements demonstrate very good junction characteristics with rectifying ratio of ∼178 and ideality factor of 1.79 at 300 K. Detectors made with such structure exhibit mid-infrared spectral photoresponse at room temperature. The peak responsivity R{sub λ} and specific detectivity D{sup *} are 0.055 A/W and 5.482 × 10{sup 8} cm·Hz{sup 1/2}/W at λ = 4.7 μm under zero-bias photovoltaic mode. Temperature-dependent photoresponse measurements show abnormal intensity variation below ∼200 K. Possible reasons for this phenomenon are also discussed.

• OSTI ID: 22258581
• Journal Information: Applied Physics Letters, Vol. 104, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM SULFIDES
HETEROJUNCTIONS
LEAD SELENIDES
MOLECULAR BEAM EPITAXY
PHOTOVOLTAIC EFFECT
TEMPERATURE DEPENDENCE
THIN FILMS