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Title: Experimental verification of effects of barrier dopings on the internal electric fields and the band structure in InGaN/GaN light emitting diodes

We experimentally clarify the effects of barrier dopings on the polarization induced electric fields and the band structure in InGaN/GaN blue light emitting diodes. Both effects were independently verified by using electric field modulated reflectance and capacitance-voltage measurement. It is shown that the Si barrier doping does reduce the polarization induced electric field in the quantum wells. But the benefit of Si-doping is nullified by modification of the band structure and depletion process. With increased number of doped barriers, smaller number of quantum wells remains in the depletion region at the onset of the diffusion process, which can reduce the effective active volume and enhance the electron overflow.
Authors:
; ; ;  [1] ;  [2] ; ; ;  [3]
  1. Department of Physics, Kongju National University, Kongju, Chungnam 314-701 (Korea, Republic of)
  2. Department of Advanced Materials Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of)
  3. Wasvesquare Co., Inc., Yongin, Gyeonggi 449-863 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22258572
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPACITANCE; DIFFUSION BARRIERS; DOPED MATERIALS; ELECTRIC FIELDS; GALLIUM NITRIDES; LIGHT EMITTING DIODES; QUANTUM WELLS