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Title: Investigation on dielectric properties of atomic layer deposited Al{sub 2}O{sub 3} dielectric films

Al/Al{sub 2}O{sub 3}/p-Si Schottky barrier diodes (SBDs) were fabricated using atomic layer deposition technique in order to investigate dielectric properties of SBDs. For this purpose, admittance measurements were conducted at room temperature between −1 V and 3 V in the frequency range of 10 kHz and 1 MHz. In addition to the investigation of Al{sub 2}O{sub 3} morphology using atomic force microscope, dielectric parameters; such as dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tan δ), and real and imaginary parts of dielectric modulus (M′ and M″, respectively), were calculated and effect of frequency on these parameters of Al/Al{sub 2}O{sub 3}/p-Si SBDs was discussed. Variations in these parameters at low frequencies were associated with the effect of interface states in low frequency region. Besides dielectric parameters, ac electrical conductivity of these SBDs was also investigated.
Authors:
 [1] ; ;  [2]
  1. Department of Physics, Faculty of Arts and Sciences, Hitit University, Çorum 19030 (Turkey)
  2. Department of Physics, Faculty of Arts and Sciences, Düzce University, Düzce 81620 (Turkey)
Publication Date:
OSTI Identifier:
22258570
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 3; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; ATOMIC FORCE MICROSCOPY; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; FILMS; KHZ RANGE 01-100; LAYERS; MORPHOLOGY; PERMITTIVITY; SCHOTTKY BARRIER DIODES; TEMPERATURE RANGE 0273-0400 K