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Title: Effect of conductive TiN buffer layer on the growth of stoichiometric VO{sub 2} films and the out-of-plane insulator–metal transition properties

A TiN buffer film is used with a conductive interfacial layer for stoichiometric vanadium dioxide (VO{sub 2}) film growth, creating a layered device with a VO{sub 2} insulator–metal transition. Low-temperature growth (<250 °C) of the VO{sub 2} film on a Ti layer on a Si substrate is achieved using inductively coupled plasma-assisted sputtering. It is found that Ti diffusion and oxidation degrades the VO{sub 2} film quality at higher temperatures, but the introduction of a TiN buffer layer suppresses the degradation and enables growth of a stoichiometric VO{sub 2} film even at 400 °C. The high resistance of the VO{sub 2} film grown on the TiN layer suggests the benefit of using the intrinsic insulator–metal transition of VO{sub 2}. The voltage-triggered switching properties of the layered devices are examined, and the cause of the high out-of-plane resistance in this layered structure is discussed based upon the dependence of the initial resistance as a function the electrode area.
Authors:
;  [1]
  1. Graduate School of Science and Technology, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan)
Publication Date:
OSTI Identifier:
22258554
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 4; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BUFFERS; DIFFUSION; ELECTRIC POTENTIAL; ELECTRODES; FILMS; LAYERS; OXIDATION; PLASMA; SPUTTERING; STOICHIOMETRY; SUBSTRATES; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0400-1000 K; TIN; TITANIUM NITRIDES; VANADIUM OXIDES