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Title: Solution based prompt inorganic condensation and atomic layer deposition of Al{sub 2}O{sub 3} films: A side-by-side comparison

A comparison was made of Al{sub 2}O{sub 3} films deposited on Si via prompt inorganic condensation (PIC) and atomic layer deposition (ALD). Current–voltage measurements as a function of annealing temperature indicate that the solution-processed PIC films, annealed at 500 °C, exhibit lower leakage and roughly equivalent breakdown strength in comparison to ALD films. PIC films are less dense than as-deposited ALD films and capacitance–voltage measurements indicate a lower relative dielectric constant. On the basis of x-ray photoelectron spectroscopy, transmission electron microscopy, and energy dispersive x-ray spectroscopy, it is found that the 500 °C anneal results in the formation of a ∼6 nm thick interfacial SiO{sub 2} layer at the Si interface. This SiO{sub 2} interfacial layer significantly affects the electrical performance of PIC Al{sub 2}O{sub 3} films deposited on Si.
Authors:
;  [1] ; ;  [2]
  1. School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97331-5501 (United States)
  2. Department of Chemistry, Oregon State University, Corvallis, Oregon 97331-4003 (United States)
Publication Date:
OSTI Identifier:
22258553
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 4; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; ANNEALING; COMPARATIVE EVALUATIONS; FILMS; LAYERS; PERMITTIVITY; SILICA; SILICON OXIDES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY; X-RAY SPECTROSCOPY