skip to main content

SciTech ConnectSciTech Connect

Title: MoS{sub 2} functionalization for ultra-thin atomic layer deposited dielectrics

The effect of room temperature ultraviolet-ozone (UV-O{sub 3}) exposure of MoS{sub 2} on the uniformity of subsequent atomic layer deposition of Al{sub 2}O{sub 3} is investigated. It is found that a UV-O{sub 3} pre-treatment removes adsorbed carbon contamination from the MoS{sub 2} surface and also functionalizes the MoS{sub 2} surface through the formation of a weak sulfur-oxygen bond without any evidence of molybdenum-sulfur bond disruption. This is supported by first principles density functional theory calculations which show that oxygen bonded to a surface sulfur atom while the sulfur is simultaneously back-bonded to three molybdenum atoms is a thermodynamically favorable configuration. The adsorbed oxygen increases the reactivity of MoS{sub 2} surface and provides nucleation sites for atomic layer deposition of Al{sub 2}O{sub 3}. The enhanced nucleation is found to be dependent on the thin film deposition temperature.
Authors:
; ; ; ; ; ; ; ; ; ;  [1] ;  [2] ;  [1] ;  [3]
  1. Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080 (United States)
  2. Department of Electrical Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22257819
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; DENSITY FUNCTIONAL METHOD; DIELECTRIC MATERIALS; MOLYBDENUM; MOLYBDENUM SULFIDES; OXYGEN; OZONE; SULFUR; SURFACES; THIN FILMS