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Title: Fracture and buckling of piezoelectric nanowires subject to an electric field

Fracture and buckling are major failure modes of thin and long nanowires (NWs), which could be affected significantly by an electric field when piezoelectricity is involved in the NWs. This paper aims to examine the issue based on the molecular dynamics simulations, where the gallium nitride (GaN) NWs are taken as an example. The results show that the influence of the electric field is strong for the fracture and the critical buckling strains, detectable for the fracture strength but almost negligible for the critical buckling stress. In addition, the reversed effects are achieved for the fracture and the critical buckling strains. Subsequently, the Timoshenko beam model is utilized to account for the effect of the electric field on the axial buckling of the GaN NWs, where nonlocal effect is observed and characterized by the nonlocal coefficient e{sub 0}a=1.1 nm. The results show that the fracture and buckling of piezoelectric NWs can be controlled by applying an electric field.
Authors:
; ;  [1]
  1. College of Engineering, Swansea University, Singleton Park, Swansea, Wales SA2 8PP (United Kingdom)
Publication Date:
OSTI Identifier:
22257802
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 17; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; BEAMS; BUCKLING; ELECTRIC FIELDS; FRACTURE PROPERTIES; GALLIUM NITRIDES; MOLECULAR DYNAMICS METHOD; NANOSTRUCTURES; PIEZOELECTRICITY; QUANTUM WIRES; SIMULATION; STRAINS; THERMAL FRACTURES; THERMAL STRESSES