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Title: Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure

Schottky barrier diodes prepared by electron beam deposition (EBD) on Sb-doped n-type Ge were characterized using deep level transient spectroscopy (DLTS). Pt EBD diodes manufactured with forming gas in the chamber had two defects, E{sub 0.28} and E{sub 0.31}, which were not previously observed after EBD. By shielding the samples mechanically during EBD, superior diodes were produced with no measureable deep levels, establishing that energetic ions created in the electron beam path were responsible for the majority of defects observed in the unshielded sample. Ge samples that were first exposed to the conditions of EBD, without metal deposition (called electron beam exposure herein), introduced a number of new defects not seen after EBD with only the E-center being common to both processes. Substantial differences were noted when these DLTS spectra were compared to those obtained using diodes irradiated by MeV electrons or alpha particles indicating that very different defect creation mechanisms are at play when too little energy is available to form Frenkel pairs. These observations suggest that when EBD ions and energetic particles collide with the sample surface, inducing intrinsic non-localised lattice excitations, they modify defects deeper in the semiconductor thus rendering them observable.
Authors:
; ; ;  [1]
  1. Department of Physics, University of Pretoria, Private Bag X20, Hatfield, 0028 (South Africa)
Publication Date:
OSTI Identifier:
22257797
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 17; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE; ALPHA PARTICLES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DOPED MATERIALS; E CENTERS; ELECTRON BEAMS; ENERGY BEAM DEPOSITION; EXCITATION; IRRADIATION; METALS; MEV RANGE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SHIELDING; TAIL IONS