Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure

Journal Article · Thu Nov 07 00:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4828999· OSTI ID:22257797

Coelho, S. M. M.; Auret, F. D.; Janse van Rensburg, P. J.; Nel, J. M. ^[1]

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1. Department of Physics, University of Pretoria, Private Bag X20, Hatfield, 0028 (South Africa)

Schottky barrier diodes prepared by electron beam deposition (EBD) on Sb-doped n-type Ge were characterized using deep level transient spectroscopy (DLTS). Pt EBD diodes manufactured with forming gas in the chamber had two defects, E{sub 0.28} and E{sub 0.31}, which were not previously observed after EBD. By shielding the samples mechanically during EBD, superior diodes were produced with no measureable deep levels, establishing that energetic ions created in the electron beam path were responsible for the majority of defects observed in the unshielded sample. Ge samples that were first exposed to the conditions of EBD, without metal deposition (called electron beam exposure herein), introduced a number of new defects not seen after EBD with only the E-center being common to both processes. Substantial differences were noted when these DLTS spectra were compared to those obtained using diodes irradiated by MeV electrons or alpha particles indicating that very different defect creation mechanisms are at play when too little energy is available to form Frenkel pairs. These observations suggest that when EBD ions and energetic particles collide with the sample surface, inducing intrinsic non-localised lattice excitations, they modify defects deeper in the semiconductor thus rendering them observable.

• OSTI ID: 22257797
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 17; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE
ALPHA PARTICLES
DEEP LEVEL TRANSIENT SPECTROSCOPY
DEFECTS
DOPED MATERIALS
E CENTERS
ELECTRON BEAMS
ENERGY BEAM DEPOSITION
EXCITATION
IRRADIATION
METALS
MEV RANGE
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
SHIELDING
TAIL IONS