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Title: A comprehensive study of thermoelectric and transport properties of β-silicon carbide nanowires

The temperature dependence of the Seebeck coefficient, the electrical and thermal conductivities of individual β-silicon carbide nanowires produced by combustion in a calorimetric bomb were studied using a suspended micro-resistance thermometry device that allows four-point probe measurements to be conducted on each nanowire. Additionally, crystal structure and growth direction for each measured nanowire was directly obtained by transmission electron microscopy analysis. The Fermi level, the carrier concentration, and mobility of each nanostructure were determined using a combination of Seebeck coefficient and electrical conductivity measurements, energy band structure and transport theory calculations. The temperature dependence of the thermal and electrical conductivities of the nanowires was explained in terms of contributions from boundary, impurity, and defect scattering.
Authors:
; ;  [1] ; ;  [2] ; ;  [3]
  1. Department of Physics University of Puerto Rico, Rio Piedras (Puerto Rico)
  2. Department of Mechanical Engineering, The University of Texas at Austin, Texas 78712 (United States)
  3. Department of Chemistry, Warsaw University, Pasteur 1 Str., 02-093 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22257790
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; ABUNDANCE; CALORIMETRY; COMBUSTION; CONCENTRATION RATIO; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; FERMI LEVEL; IMPURITIES; QUANTUM WIRES; SILICON CARBIDES; TEMPERATURE DEPENDENCE; THERMAL CONDUCTIVITY; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT THEORY; WIRES