A comprehensive study of thermoelectric and transport properties of β-silicon carbide nanowires

Journal Article · Thu Nov 14 00:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4829924· OSTI ID:22257790

Valentín, L. A.; Betancourt, J.; Pettes, M. T.; Shi, L. ^[1]; Soszyński, M.; Huczko, A. ^[2]

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1. Department of Mechanical Engineering, The University of Texas at Austin, Texas 78712 (United States)
2. Department of Chemistry, Warsaw University, Pasteur 1 Str., 02-093 Warsaw (Poland)

The temperature dependence of the Seebeck coefficient, the electrical and thermal conductivities of individual β-silicon carbide nanowires produced by combustion in a calorimetric bomb were studied using a suspended micro-resistance thermometry device that allows four-point probe measurements to be conducted on each nanowire. Additionally, crystal structure and growth direction for each measured nanowire was directly obtained by transmission electron microscopy analysis. The Fermi level, the carrier concentration, and mobility of each nanostructure were determined using a combination of Seebeck coefficient and electrical conductivity measurements, energy band structure and transport theory calculations. The temperature dependence of the thermal and electrical conductivities of the nanowires was explained in terms of contributions from boundary, impurity, and defect scattering.

• OSTI ID: 22257790
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
36 MATERIALS SCIENCE
ABUNDANCE
CALORIMETRY
COMBUSTION
CONCENTRATION RATIO
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
FERMI LEVEL
IMPURITIES
QUANTUM WIRES
SILICON CARBIDES
TEMPERATURE DEPENDENCE
THERMAL CONDUCTIVITY
TRANSMISSION ELECTRON MICROSCOPY
TRANSPORT THEORY
WIRES