A normal-incidence PtSi photoemissive detector with black silicon light-trapping

Journal Article · Thu Nov 14 00:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4829897· OSTI ID:22257780

Steglich, Martin; Zilk, Matthias; Käsebier, Thomas; Schrempel, Frank ^[1]; Bingel, Astrid; Kley, Ernst-Bernhard; Tünnermann, Andreas ^[1]; Patzig, Christian ^[2]

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1. Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Jena (Germany)
2. Fraunhofer Institute for Mechanics of Materials IWM, Halle (Germany)

A normal-incidence light-trapping scheme relying on black silicon surface nanostructures for Si-based photoemissive detectors, operating in the IR spectral range, is proposed. An absorptance enhancement by a factor of 2–3 is demonstrated for technologically most relevant, ultrathin (2 nm–3 nm) PtSi rear layers on Si. It is shown that this increase can be translated into an equivalent increase in responsivity because of the absorption limitation of detector performance. Pd{sub 2}Si/p-Si detectors with black silicon are suggested as promising candidates for room temperature detection in the third optical window with an expected external quantum efficiency in the range of 9%–14%.

• OSTI ID: 22257780
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION
NANOSTRUCTURES
PALLADIUM SILICIDES
PERFORMANCE
QUANTUM EFFICIENCY
SILICON
TRAPPING