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Title: A normal-incidence PtSi photoemissive detector with black silicon light-trapping

A normal-incidence light-trapping scheme relying on black silicon surface nanostructures for Si-based photoemissive detectors, operating in the IR spectral range, is proposed. An absorptance enhancement by a factor of 2–3 is demonstrated for technologically most relevant, ultrathin (2 nm–3 nm) PtSi rear layers on Si. It is shown that this increase can be translated into an equivalent increase in responsivity because of the absorption limitation of detector performance. Pd{sub 2}Si/p-Si detectors with black silicon are suggested as promising candidates for room temperature detection in the third optical window with an expected external quantum efficiency in the range of 9%–14%.
Authors:
; ; ;  [1] ; ; ;  [1] ;  [2] ;  [3]
  1. Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Jena (Germany)
  2. (Germany)
  3. Fraunhofer Institute for Mechanics of Materials IWM, Halle (Germany)
Publication Date:
OSTI Identifier:
22257780
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; NANOSTRUCTURES; PALLADIUM SILICIDES; PERFORMANCE; QUANTUM EFFICIENCY; SILICON; TRAPPING