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Title: Transport mechanisms and effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunction solar cells

The impact of boron doping on the p-layer of thin film silicon solar cells is assessed by measuring the effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunctions. A deviation from ideal diode characteristics is revealed by an increase of ideality factor with doping concentration. Higher current densities and lower effective Schottky barriers are evaluated for higher doping levels, resulting in increasingly Ohmic behaviour. This is attributed to an enhancement of tunneling through a thinner depletion region, as supported by computer simulations. Extracted barriers are in the range of 0.7–1 eV for the heterojunctions with rectifying behaviour.
Authors:
;  [1] ;  [2]
  1. Electronic and Electrical Engineering Department, University of Sheffield, S1 3JD Sheffield (United Kingdom)
  2. Department of Technology, University of Applied Sciences Bielefeld Campus, Minden, D-32427 Minden (Germany)
Publication Date:
OSTI Identifier:
22257777
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON; COMPUTERIZED SIMULATION; CONCENTRATION RATIO; CURRENT DENSITY; HETEROJUNCTIONS; SILICON SOLAR CELLS; THIN FILMS; ZINC OXIDES