Calculation of metamorphic two-dimensional quantum energy system: Application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures
Abstract
In this work, we calculate the two-dimensional quantum energy system of the In(Ga)As wetting layer that arises in InAs/InGaAs/GaAs metamorphic quantum dot structures. Model calculations were carried on the basis of realistic material parameters taking in consideration their dependence on the strain relaxation of the metamorphic buffer; results of the calculations were validated against available literature data. Model results confirmed previous hypothesis on the extrinsic nature of the disappearance of wetting layer emission in metamorphic structures with high In composition. We also show how, by adjusting InGaAs metamorphic buffer parameters, it could be possible: (i) to spatially separate carriers confined in quantum dots from wetting layer carriers, (ii) to create an hybrid 0D-2D system, by tuning quantum dot and wetting layer levels. These results are interesting not only for the engineering of quantum dot structures but also for other applications of metamorphic structures, as the two design parameters of the metamorphic InGaAs buffer (thickness and composition) provide additional degrees of freedom to control properties of interest.
- Authors:
-
- IMEM-CNR Institute, Parco Area delle Scienze, 37/A 43100 Parma (Italy)
- Publication Date:
- OSTI Identifier:
- 22257776
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 114; Journal Issue: 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; ENERGY SYSTEMS; ENGINEERING; GALLIUM ARSENIDES; HYBRIDIZATION; INDIUM ARSENIDES; LAYERS; QUANTUM DOTS; RELAXATION; THICKNESS
Citation Formats
Seravalli, L., Trevisi, G., and Frigeri, P. Calculation of metamorphic two-dimensional quantum energy system: Application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures. United States: N. p., 2013.
Web. doi:10.1063/1.4830021.
Seravalli, L., Trevisi, G., & Frigeri, P. Calculation of metamorphic two-dimensional quantum energy system: Application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures. United States. https://doi.org/10.1063/1.4830021
Seravalli, L., Trevisi, G., and Frigeri, P. 2013.
"Calculation of metamorphic two-dimensional quantum energy system: Application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures". United States. https://doi.org/10.1063/1.4830021.
@article{osti_22257776,
title = {Calculation of metamorphic two-dimensional quantum energy system: Application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures},
author = {Seravalli, L. and Trevisi, G. and Frigeri, P.},
abstractNote = {In this work, we calculate the two-dimensional quantum energy system of the In(Ga)As wetting layer that arises in InAs/InGaAs/GaAs metamorphic quantum dot structures. Model calculations were carried on the basis of realistic material parameters taking in consideration their dependence on the strain relaxation of the metamorphic buffer; results of the calculations were validated against available literature data. Model results confirmed previous hypothesis on the extrinsic nature of the disappearance of wetting layer emission in metamorphic structures with high In composition. We also show how, by adjusting InGaAs metamorphic buffer parameters, it could be possible: (i) to spatially separate carriers confined in quantum dots from wetting layer carriers, (ii) to create an hybrid 0D-2D system, by tuning quantum dot and wetting layer levels. These results are interesting not only for the engineering of quantum dot structures but also for other applications of metamorphic structures, as the two design parameters of the metamorphic InGaAs buffer (thickness and composition) provide additional degrees of freedom to control properties of interest.},
doi = {10.1063/1.4830021},
url = {https://www.osti.gov/biblio/22257776},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 18,
volume = 114,
place = {United States},
year = {Thu Nov 14 00:00:00 EST 2013},
month = {Thu Nov 14 00:00:00 EST 2013}
}