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Title: Weak interaction between germanene and GaAs(0001) by H intercalation: A route to exfoliation

Epitaxial germanene on a semiconducting GaAs(0001) substrate is studied by ab initio calculations. The germanene-substrate interaction is found to be strong for direct contact but can be substantially reduced by H intercalation at the interface. Our results indicate that it is energetically possible to take the germanene off the GaAs(0001) substrate. While mounted on the substrate, the electronic structure shows a distinct Dirac cone shift above the Fermi energy with a splitting of 175 meV. On the other hand, we find for a free standing sheet a band gap of 24 meV, which is due to the intrinsic spin orbit coupling.
Authors:
;  [1]
  1. Physical Science and Engineering Division, KAUST, Thuwal 23955-6900 (Saudi Arabia)
Publication Date:
OSTI Identifier:
22257775
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CLATHRATES; CONES; ELECTRONIC STRUCTURE; EPITAXY; GALLIUM ARSENIDES; L-S COUPLING; SUBSTRATES; WEAK INTERACTIONS