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Title: Giant tunneling magnetoresistance in silicene

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4830020· OSTI ID:22257769
 [1];  [2]
  1. Department of Physics, Faculty of Science, Kunming University of Science and Technology, Kunming, 650500 Yunnan (China)
  2. Yiyuan Student Community, Center of Student Community Education and Management, Kunming University of Science and Technology, Kunming, 650500 Yunnan (China)

We have theoretically studied ballistic electron transport in silicene under the manipulation of a pair of ferromagnetic gate. Transport properties like transmission and conductance have been calculated by the standard transfer matrix method for parallel and antiparallel magnetization configurations. It is demonstrated here that, due to the stray field-induced wave-vector filtering effect, remarkable difference in configuration-dependent transport gives rise to a giant tunneling magnetoresistance. In combination with the peculiar buckled structure of silicene and its electric tunable energy gap, the receiving magnetoresistance can be efficiently modulated by the externally-tunable stray field, electrostatic potential, and staggered sublattice potential, providing some flexible strategies to construct silicene-based nanoelectronic device.

OSTI ID:
22257769
Journal Information:
Journal of Applied Physics, Vol. 114, Issue 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English

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