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Title: Topography, complex refractive index, and conductivity of graphene layers measured by correlation of optical interference contrast, atomic force, and back scattered electron microscopy

The optical phase shift by reflection on graphene is measured by interference contrast microscopy. The height profile across graphene layers on 300 nm thick SiO{sub 2} on silicon is derived from the phase profile. The complex refractive index and conductivity of graphene layers on silicon with 2 nm thin SiO{sub 2} are evaluated from a phase profile, while the height profile of the layers is measured by atomic force microscopy. It is observed that the conductivity measured on thin SiO{sub 2} is significantly greater than on thick SiO{sub 2}. Back scattered electron contrast of graphene layers is correlated to the height of graphene layers.
Authors:
;  [1] ; ;  [2] ;  [3]
  1. Training Application Support Center, Carl Zeiss Microscopy GmbH, Königsallee 9-21, 37081 Göttingen (Germany)
  2. Department of Physics, Columbia University New York, 538 West 120th Street, New York, New York 10027 (United States)
  3. DME Nanotechnologie GmbH, Geysostr. 13, D-38106 Braunschweig (Germany)
Publication Date:
OSTI Identifier:
22257764
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMIC FORCE MICROSCOPY; ELECTRON MICROSCOPY; GRAPHENE; LAYERS; PHASE SHIFT; REFLECTION; REFRACTIVE INDEX; SILICA; SILICON; SILICON OXIDES; TOPOGRAPHY