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Title: Intrinsic device-to-device variation in graphene field-effect transistors on a Si/SiO{sub 2} substrate as a platform for discriminative gas sensing

Arrays of nearly identical graphene devices on Si/SiO{sub 2} exhibit a substantial device-to-device variation, even in case of a high-quality chemical vapor deposition (CVD) or mechanically exfoliated graphene. We propose that such device-to-device variation could provide a platform for highly selective multisensor electronic olfactory systems. We fabricated a multielectrode array of CVD graphene devices on a Si/SiO{sub 2} substrate and demonstrated that the diversity of these devices is sufficient to reliably discriminate different short-chain alcohols: methanol, ethanol, and isopropanol. The diversity of graphene devices on Si/SiO{sub 2} could possibly be used to construct similar multisensor systems trained to recognize other analytes as well.
Authors:
 [1] ; ;  [2] ; ;  [3] ;  [4] ;  [5] ;  [1] ;  [6]
  1. Department of Chemistry, University of Nebraska–Lincoln, Lincoln, Nebraska 68588 (United States)
  2. Department of Physics, Saratov State Technical University, Saratov 410054 (Russian Federation)
  3. Institute of Microstructure Technology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)
  4. Institute for Applied Materials - Energy Storage Systems (IAM-ESS), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)
  5. Department of Physics, Southern Illinois University, Carbondale, Illinois 62901 (United States)
  6. (United States)
Publication Date:
OSTI Identifier:
22257753
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CHEMICAL VAPOR DEPOSITION; ETHANOL; FIELD EFFECT TRANSISTORS; GASES; GRAPHENE; METHANOL; SENSORS; SILICON OXIDES