Intrinsic device-to-device variation in graphene field-effect transistors on a Si/SiO{sub 2} substrate as a platform for discriminative gas sensing
- Department of Chemistry, University of Nebraska–Lincoln, Lincoln, Nebraska 68588 (United States)
- Department of Physics, Saratov State Technical University, Saratov 410054 (Russian Federation)
- Institute of Microstructure Technology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)
- Institute for Applied Materials - Energy Storage Systems (IAM-ESS), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)
- Department of Physics, Southern Illinois University, Carbondale, Illinois 62901 (United States)
Arrays of nearly identical graphene devices on Si/SiO{sub 2} exhibit a substantial device-to-device variation, even in case of a high-quality chemical vapor deposition (CVD) or mechanically exfoliated graphene. We propose that such device-to-device variation could provide a platform for highly selective multisensor electronic olfactory systems. We fabricated a multielectrode array of CVD graphene devices on a Si/SiO{sub 2} substrate and demonstrated that the diversity of these devices is sufficient to reliably discriminate different short-chain alcohols: methanol, ethanol, and isopropanol. The diversity of graphene devices on Si/SiO{sub 2} could possibly be used to construct similar multisensor systems trained to recognize other analytes as well.
- OSTI ID:
- 22257753
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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