Electric field effect in ultrathin black phosphorus

Journal Article · Mon Mar 10 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4868132· OSTI ID:22257748

Koenig, Steven P.; Schmidt, Hennrik ^[1]; Doganov, Rostislav A.; Castro Neto, A. H.; Özyilmaz, Barbaros ^[1]

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1. Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546 (Singapore)

Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here, we demonstrate few-layer black phosphorus field effect devices on Si/SiO{sub 2} and measure charge carrier mobility in a four-probe configuration as well as drain current modulation in a two-point configuration. We find room-temperature mobilities of up to 300 cm{sup 2}/Vs and drain current modulation of over 10{sup 3}. At low temperatures, the on-off ratio exceeds 10{sup 5}, and the device exhibits both electron and hole conduction. Using atomic force microscopy, we observe significant surface roughening of thin black phosphorus crystals over the course of 1 h after exfoliation.

• OSTI ID: 22257748
• Journal Information: Applied Physics Letters, Vol. 104, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GRAPHENE
MONOCRYSTALS
PHOSPHORUS
SILICON OXIDES
THIN FILMS