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Title: Electric field effect in ultrathin black phosphorus

Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here, we demonstrate few-layer black phosphorus field effect devices on Si/SiO{sub 2} and measure charge carrier mobility in a four-probe configuration as well as drain current modulation in a two-point configuration. We find room-temperature mobilities of up to 300 cm{sup 2}/Vs and drain current modulation of over 10{sup 3}. At low temperatures, the on-off ratio exceeds 10{sup 5}, and the device exhibits both electron and hole conduction. Using atomic force microscopy, we observe significant surface roughening of thin black phosphorus crystals over the course of 1 h after exfoliation.
Authors:
;  [1] ;  [2] ; ; ;  [1] ;  [2] ;  [3]
  1. Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546 (Singapore)
  2. (Singapore)
  3. (NGS), National University of Singapore, 28 Medical Drive, Singapore 117456 (Singapore)
Publication Date:
OSTI Identifier:
22257748
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GRAPHENE; MONOCRYSTALS; PHOSPHORUS; SILICON OXIDES; THIN FILMS