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Title: Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning transmission electron microscopy. We show that some nanowires exhibit well localized regions emitting light at the energy of a stacking fault bound exciton (3.42‚ÄČeV) and are able to observe the presence of a single stacking fault in these regions. Precise measurements of the cathodoluminescence signal in the vicinity of the stacking fault give access to the exciton diffusion length near this location.
Authors:
;  [1] ;  [2] ; ; ;  [3]
  1. Inst. NEEL, Univ. Grenoble Alpes, F-38042 Grenoble (France)
  2. (France)
  3. INAC, CEA, F-38054 Grenoble (France)
Publication Date:
OSTI Identifier:
22257746
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CATHODOLUMINESCENCE; DIFFUSION LENGTH; EXCITONS; GALLIUM NITRIDES; PHOTOLUMINESCENCE; QUANTUM WIRES; SCANNING ELECTRON MICROSCOPY; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; WIRES