skip to main content

Title: Silicon heterojunction solar cell with passivated hole selective MoO{sub x} contact

We explore substoichiometric molybdenum trioxide (MoO{sub x}, x < 3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711 mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoO{sub x}, we observe a substantial gain in photocurrent of 1.9 mA/cm{sup 2} in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors.
Authors:
; ; ;  [1] ;  [2] ; ; ;  [3]
  1. Electrical Engineering and Computer Sciences Department, University of California, Berkeley, California 94720 (United States)
  2. (United States)
  3. Photovoltaics and Thin Film Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne, 2000 Neuchâtel (Switzerland)
Publication Date:
OSTI Identifier:
22257742
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; HETEROJUNCTIONS; MOLYBDENUM OXIDES; SEMICONDUCTOR MATERIALS; SILICON; SILICON SOLAR CELLS; SUBSTOICHIOMETRY; ULTRAVIOLET RADIATION