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Title: Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes

This paper presents an extensive investigation of the deep levels related to non-radiative recombination in InGaN/GaN light-emitting diodes (LEDs). The study is based on combined optical and deep-level transient spectroscopy measurements, carried out on LEDs with identical structure and with different values of the non-radiative recombination coefficient. Experimental data lead to the following, relevant, results: (i) LEDs with a high non-radiative recombination coefficient have a higher concentration of a trap (labeled as “e{sub 2}”) with an activation energy of 0.7 eV, which is supposed to be located close to/within the active region; (ii) measurements carried out with varying filling pulse duration suggest that this deep level behaves as a point-defect/dislocation complex. The Arrhenius plot of this deep level is critically compared with the previous literature reports, to identify its physical origin.
Authors:
; ; ; ;  [1] ; ; ; ;  [2]
  1. Department of Information Engineering, University of Padova, Via Gradenigo 6/B, 35131 Padova (Italy)
  2. OSRAM Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg (Germany)
Publication Date:
OSTI Identifier:
22257741
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; GALLIUM NITRIDES; LIGHT EMITTING DIODES; POINT DEFECTS; RECOMBINATION