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Title: On the mobility and contact resistance evaluation for transistors based on MoS{sub 2} or two-dimensional semiconducting atomic crystals

Contact resistance (R{sub c}) can substantially obscure the extracted mobility based on standard transconductance or two-point conductance measurements of field-effect devices especially for low density of states materials such as MoS{sub 2} or similar atomic crystals. Currently, there exists a pressing need for a routine technique that can decouple mobility extraction from R{sub c}. By combining experiments and analysis, we show that the Y-function method offers a robust route for evaluating the low-field mobility, threshold voltage and R{sub c} even when the contact is a Schottky-barrier as is common in two-dimensional transistors. In addition, an independent modified transfer length method evaluation corroborates the Y-function analysis.
Authors:
; ;  [1]
  1. Microelectronics Research Center and the Department of Electrical and Computer Engineering, The University of Texas - Austin, Austin, Texas 78758 (United States)
Publication Date:
OSTI Identifier:
22257740
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMS; CRYSTALS; ELECTRIC POTENTIAL; MOBILITY; MOLYBDENUM SULFIDES; TRANSISTORS