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Title: Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO{sub 2} structure using fast I-V measurement

This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO{sub 2} n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (V{sub t}) shifts positively during fast I-V double sweep measurement. However, in I/O devices, V{sub t} shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting Hf{sub x}Zr{sub 1−x}O{sub 2} as gate oxide, can reduce the charge/discharge effect.
Authors:
; ;  [1] ; ; ; ;  [2] ; ; ;  [3]
  1. Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)
  2. Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China)
  3. Device Department, United Microelectronics Corporation, Tainan Science Park, Taiwan (China)
Publication Date:
OSTI Identifier:
22257739
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; HAFNIUM OXIDES; SEMICONDUCTOR MATERIALS; TIN; TITANIUM NITRIDES