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Title: On the limits to Ti incorporation into Si using pulsed laser melting

Fabrication of p-Si(111) layers with Ti levels well above the solid solubility limit was achieved via ion implantation of 15 keV {sup 48}Ti{sup +} at doses of 10{sup 12} to 10{sup 16} cm{sup −2} followed by pulsed laser melting using a Nd:YAG laser (FWHM = 6 ns) operating at 355 nm. All implanted layers were examined using cross-sectional transmission electron microscopy, and only the 10{sup 16} cm{sup −2} Ti implant dose showed evidence of Ti clustering in a microstructure with a pattern of Ti-rich zones. The liquid phase diffusivity and diffusive velocity of Ti in Si were estimated to be 9 × 10{sup −4} cm{sup 2}/s and (2 ± 0.5) × 10{sup 4} m/s, respectively. Using these results the morphological stability limit for planar resolidification of Si:Ti was evaluated, and the results indicate that attaining sufficient concentrations of Ti in Si to reach the nominal Mott transition in morphologically stable plane-front solidification should occur only for velocities so high as to exceed the speed limits for crystalline regrowth in Si(111)
Authors:
;  [1] ; ; ;  [2] ; ;  [3]
  1. U.S. Army ARDEC—Benét Laboratories, Watervliet Arsenal, New York 12189 (United States)
  2. School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)
  3. State University of New York—College of Nanoscale Science and Engineering, Albany, New York 12203 (United States)
Publication Date:
OSTI Identifier:
22257730
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ION IMPLANTATION; MELTING; NEODYMIUM LASERS; PULSES; TITANIUM 48; TRANSMISSION ELECTRON MICROSCOPY