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Title: Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample

We show that the orientation of nitrogen-vacancy (NV) defects in diamond can be efficiently controlled through chemical vapor deposition growth on a (111)-oriented diamond substrate. More precisely, we demonstrate that spontaneously generated NV defects are oriented with a ∼97% probability along the [111] axis, corresponding to the most appealing orientation among the four possible crystallographic axes. Such a nearly perfect preferential orientation is explained by analyzing the diamond growth mechanism on a (111)-oriented substrate and could be extended to other types of defects. This work is a significant step towards the design of optimized diamond samples for quantum information and sensing applications.
Authors:
;  [1] ; ;  [1] ;  [2] ; ; ; ;  [3]
  1. Laboratoire Aimé Cotton, CNRS, Université Paris-Sud and Ecole Normale Supérieure de Cachan, 91405 Orsay (France)
  2. (France)
  3. Laboratoire des Sciences des Procédés et des Matériaux, CNRS and Université Paris 13, 93340 Villetaneuse (France)
Publication Date:
OSTI Identifier:
22257723
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DEFECTS; DIAMONDS; NITROGEN; VACANCIES