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Title: Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10 nm thickness, deposited on a 100 nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16° from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.
Authors:
 [1] ;  [2] ; ;  [3] ;  [4] ;  [5]
  1. Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
  2. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
  3. EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
  4. Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan)
  5. (Japan)
Publication Date:
OSTI Identifier:
22257722
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTALS; ELECTRON DIFFRACTION; GALLIUM ARSENIDES; PERIODICITY; STRAINS; SUPERLATTICES