SiO{sub 2}/SiC structures annealed in D{sub 2}{sup 18}O: Compositional and electrical effects

Journal Article · Mon Mar 17 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4869124· OSTI ID:22257720

Corrêa, S. A. ^[1]; Soares, G. V.; Boudinov, H. I. ^[1]; Stedile, F. C. ^[1]

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1. PGMICRO, UFRGS, 91509-900, Porto Alegre, RS (Brazil)

Effects of water vapor annealing on SiO{sub 2}/4H-SiC structures formed following different routes were investigated using water isotopically enriched in {sup 18}O and {sup 2}H (D). Isotopic exchange between oxygen from the water vapor and oxygen from SiO{sub 2} films deposited on 4H-SiC was observed in the whole depth of the films, differently from the behavior of SiO{sub 2} films thermally grown on 4H-SiC. The highest amount of D was obtained in the sample with the highest negative fixed charge concentration, suggesting that the D incorporation occurs in defects in the structure that exist prior to the annealing. As a consequence of the water annealing, a significant reduction in the negative effective charge in metal-oxide-semiconductor capacitors and the removal of the SiO{sub 2}/SiC interfacial region was observed, attributed to the reduction of the amount of SiO{sub x}C{sub y} compounds in the interfacial region.

• OSTI ID: 22257720
• Journal Information: Applied Physics Letters, Vol. 104, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
DEUTERIUM
OXYGEN 18
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SILICON OXIDES
WATER VAPOR