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Title: SiO{sub 2}/SiC structures annealed in D{sub 2}{sup 18}O: Compositional and electrical effects

Effects of water vapor annealing on SiO{sub 2}/4H-SiC structures formed following different routes were investigated using water isotopically enriched in {sup 18}O and {sup 2}H (D). Isotopic exchange between oxygen from the water vapor and oxygen from SiO{sub 2} films deposited on 4H-SiC was observed in the whole depth of the films, differently from the behavior of SiO{sub 2} films thermally grown on 4H-SiC. The highest amount of D was obtained in the sample with the highest negative fixed charge concentration, suggesting that the D incorporation occurs in defects in the structure that exist prior to the annealing. As a consequence of the water annealing, a significant reduction in the negative effective charge in metal-oxide-semiconductor capacitors and the removal of the SiO{sub 2}/SiC interfacial region was observed, attributed to the reduction of the amount of SiO{sub x}C{sub y} compounds in the interfacial region.
Authors:
;  [1] ; ;  [1] ;  [2] ;  [1] ;  [2]
  1. PGMICRO, UFRGS, 91509-900, Porto Alegre, RS (Brazil)
  2. (Brazil)
Publication Date:
OSTI Identifier:
22257720
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; DEUTERIUM; OXYGEN 18; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SILICON OXIDES; WATER VAPOR