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Title: Impact of vacancy clusters on characteristic resistance change of nonstoichiometric strontium titanate nano-film

In practical applications to bipolar resistance switching (BRS) memory devices with enhanced performance and high-scalability, oxide materials are commonly fabricated to highly nonstoichiometric and nanometer scale films. In this study, we fabricated ultrathin strontium titanate film, which shows two types of BRS behavior. By using micro-beam X-ray photoemission spectroscopy, the changes of core-level spectra depending on the resistance states are spatially resolved. Experimental and calculated results demonstrated that the fundamental switching mechanism in the two types of BRS is originated from the migration of anion and cation vacancies and the formation of insulating vacancy clusters near vicinity of the interface.
Authors:
; ; ; ; ; ; ;  [1] ; ;  [2] ; ;  [3] ;  [4] ;  [5]
  1. CFI-CES, IBS and Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)
  2. CSCMR, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)
  3. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  4. Department of Physics, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)
  5. Department of Physics and Photon Science, School of Physics and Chemistry, Ertl Center for Electrochemistry and Catalyst, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22257693
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; MEMORY DEVICES; PHOTOEMISSION; SPECTROSCOPY; STRONTIUM; THIN FILMS; TITANATES; VACANCIES