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Title: Epitaxial Si encapsulation of highly misfitting SiC quantum dot arrays formed on Si (001)

This work examines Si overgrowth to encapsulate 3C-SiC quantum dot arrays epitaxially grown on Si substrates. Using transmission electron microscopy, we show how the crystalline quality of the Si cap depends on the growth conditions. Overgrowth at 300 °C leads to a planar, epitaxial Si cap, but with small crystallographic rotations in the cap above each quantum dot. At 400 °C growth temperature, Si exhibits reduced sticking to the SiC, leading to a non-planar cap. However, a two-step process, with thin layer grown at 250 °C followed by growth at 500 °C, leads to a planar cap with a much-reduced density of defects.
Authors:
;  [1] ; ;  [2] ;  [3]
  1. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
  2. Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15213 (United States)
  3. Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
Publication Date:
OSTI Identifier:
22257216
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTALLOGRAPHY; DEFECTS; EPITAXY; QUANTUM DOTS; SILICON CARBIDES; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY